منابع مشابه
Sterilisation by Ecr Plasma
Microwave plasma was built to produce plasma in axial direction. Plasma was initiated in a Plaxy Glass made vacuum tube by 2.45GHz commercial magnetron and meanwhile system was driven by 14 Amperes DC current passing through 16cm inner diameter toroid. Measurements with a Longmuir probe and ICCD for optical spectrometry were used to characterize internal parameters like electron density, electr...
متن کاملCharacterization of a Waveguide ECR Plasma Source
The design and preliminary testing of a waveguide electron cyclotron resonance (ECR) heated plasma source is presented in this paper. The design utilizes resonant absorption of traveling microwaves to heat the discharge, avoiding any lifetime constraints on the device due to barium depletion or ion bombardment in more conventional devices. Results from magnetostatic calculations are presented, ...
متن کاملECR Based Chemically Assisted Plasma Etching Of GaAs
Etching of GaAs, when plasma of Ar gas is used and CF4 /O2 is directed fall on the wafer from another port in Electron Cyclotron Resonance (ECR) source in Chemically Assisted Ion Beam Etching (CAIBE) has been carried out. The plasma source was 2.45 GHz microwave source superimposed with mirror type magnetic field configuration to have resonance. Effect of CF4/O2/Ar ratio and substrate bias on e...
متن کاملECR Plasma Source for Heavy Ion Beam Charge Neutralization*
Philip C. Efthimion, Erik Gilson, Larry Grisham, Pavel Kolchin and Ronald C. Davidson Plasma Physics Laboratory Princeton University, Princeton, New Jersey, 08543, USA Simon Yu and B. Grant Logan Lawrence Berkeley National Laboratory University of California, Berkeley, California, 94720, USA Highly ionized plasmas are being considered as a medium for charge neutralizing heavy ion beams in order...
متن کاملA UHF-ECR Plasma Etcher for Insulation Films
OVERVIEW: In the rapid evolution of VLSI technology toward smaller geometries and increased levels of chip integration, minimum features of 0.18 μm are already being mass produced, and feature sizes of 0.13 μm are being developed. At the same time, 300-mm fab lines are being built, and this is driving a demand for new etching technologies that support smaller tolerances and larger wafer sizes. ...
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ژورنال
عنوان ژورنال: Le Journal de Physique IV
سال: 1997
ISSN: 1155-4339
DOI: 10.1051/jp4:1997419